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tv/linear applications rf & microwave transistors .500 4l stud (m130) epoxy sealed . 170 - 230 mhz . 25 volts . imd - 55db . common emitter . gold metallization . high saturated power capability . diffused emitter ballast resistors . designed for high power linear operation . p out = 20 w min. with 8.0 db gain description the SD1455 is a gold metallized epitaxial silicon npn planar transistor using diffused emitter ballast resistors for high linearity class a operation in vhf and band iii television transmitters and trans- posers. pin connection branding SD1455 order code SD1455 absolute maximum ratings (t case = 25 c) symbol parameter value unit v ceo collector-emitter voltage 35 v v ces collector-emitter voltage 60 v v ebo emitter-base voltage 4.0 v i c device current 8.0 a p diss power dissipation 140 w t j junction temperature +200 c t stg storage temperature - 65 to +150 c r th(j-c) junction-case thermal resistance 1.5 c/w SD1455 1. collector 3. base 2. emitter 4. emitter thermal data july 1993 1/4
electrical specifications (t case = 25 c) symbol test conditions value unit min. typ. max. p out f = 225 mhz v ce = 25 v i c = 2.5 a 20 w g p f = 225 mhz v ce = 25 v i c = 2.5 a 8.0 9.0 db imd 3 *p out = 14 w v ce = 25 v i c = 2.5 a - 55 dbc c ob f = 1 mhz v cb = 30 v 85 pf note: * f = 225 mhz 3 tone testing vision carrier - 8db/ref sound carrier - 7db/ref sideband carrier - 16db/ref static symbol test conditions value unit min. typ. max. bv cbo i c = 50 ma i e = 0 ma 65 v bv cer i c = 50 ma r be = 10 w 60 v bv ceo i c = 50 ma i b = 0 ma 35 v bv ebo i e = 10 ma i c = 0 ma 4.0 v i ces v ce = 50 v v be = 0 v 5 ma h fe v ce = 5 v i c = 1 a 20 120 dynamic typical performance power output vs power input intermodulation distortion vs power output SD1455 2/4
z cl z in impedance data freq. z in ( w )z cl ( w ) 150 mhz 1.0 + j 1.0 9.0 + j 5.0 250 mhz 1.0 + j 2.0 6.0 + j 6.0 v ce = 28 v i c = 2.5 a normalized to 50 ohms typical performance (cont'd) thermal resistance vs case temperature safe operaitng area SD1455 3/4
package mechanical data ref.: dwg. no.12-0130 information furnished is believed to be accurate and reliable. however, sgs-thomson microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. no license is granted by implication or otherwise under any patent or patent rights of sgs-thomson microelectronics. specification s mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously s upplied. sgs-thomson microelectronics products are not authorized for use as critical components in life support devices or systems with out express written approval of sgs-thomson microelectonics. ? 1994 sgs-thomson microelectronics - all rights reserved sgs-thomson microelectronics group of companies australia - brazil - france - germany - hong kong - italy - japan - korea - malaysia - malta - morocco - the netherlands - singapore - spain - sweden - switzerland - taiwan - thailand - united kingdom - u.s.a SD1455 4/4

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